Ini yang saya tahu tentang NPN BJTs (Bipolar Junction Transistor): Base-Emitter saat ini diperkuat kali HFE di Collector-Emitter, sehingga Ice = Ibe * HFE Vbeadalah tegangan antara Base-Emitter, dan, seperti dioda apa pun, biasanya sekitar 0,65V. Tapi saya tidak ingat Vec. Jika Vbelebih rendah...
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Bagaimana cara kerja transistor BJT dalam keadaan jenuh?
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